MJE3055 transistor (npn) features power dissipation p cm: 2 w (tamb=25 ) collector current i cm: 10 a collector-base voltage v (br)cbo : 70 v operating and storage junction temperature range t j , t stg : -55 to +150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo ic= 1 ma, i e =0 70 v collector-emitter breakdown voltage v (br)ceo ic= 200 ma, i b =0 60 v emitter-base breakdown voltage v (br)ebo i e = 1 ma, i c =0 5 v collector cut-off current i cbo v cb = 70 v, i e =0 1 ma collector cut-off current i ceo v ce = 30 v, i e =0 0.7 ma emitter cut-off current i ebo v eb = 5 v, i c =0 5 ma h fe(1) v ce = 4 v, i c = 4 a 20 100 dc current gain h fe(2) v ce = 4 v, i c = 10 a 5 i c = 4 a, i b = 400 ma 1.1 v collector-emitter saturation voltage v ce(sat) i c = 10 a, i b =3.3a 8 v base-emitter voltage v be v ce = 4 v, i c = 4 a 1.8 v transition frequency f t v ce = 10 v, i c = 500 ma 2 mhz 1 2 3 to-220 1. base 2. collector 3. emitter MJE3055 http:// www.wej.cn e-mail:wej@yongerjia.com wej electronic co. r o hs wej electronic co.,ltd
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